Formation and evolution of F nanobubbles in amorphous and crystalline Si

被引：19
|
作者：
Boninelli, S. [1 ,2 ]
Impellizzeri, G. [1 ,2 ]
Mirabella, S. [1 ,2 ]
Priolo, F. [1 ,2 ]
Napolitani, E. [3 ,4 ]
Cherkashin, N. [5 ]
Cristiano, F. [6 ]
机构：
[1] Univ Catania, MATIS CNR, INFM, I-95123 Catania, Italy
[2] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy
[3] Univ Padua, MATIS CNR, INFM, I-35131 Padua, Italy
[4] Univ Padua, Dipartimento Fis, I-35131 Padua, Italy
[5] CEMES CNRS, F-31055 Toulouse, France
[6] CNRS, LAAS, F-31077 Toulouse, France
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 06期
关键词：
D O I：
10.1063/1.2969055
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The formation and evolution of F-induced nanobubbles in Si was investigated. Si samples were preamorphized, implanted with F, and partially regrown by solid phase epitaxy (SPE). It is shown that nanobubbles are formed already in the amorphous side of partially regrown samples and are then incorporated in crystalline Si during SPE. The bubbles are interpreted as the result of the diffusion and coalescence of F atoms and dangling bonds already in the amorphous matrix. During high temperature annealing after SPE, F outdiffuses; correspondingly, the bubbles partially dissolve and transform from spherical- to cylinder-shaped bubbles. (C) 2008 American Institute of Physics.
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页数：3
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