Improvement of conversion efficiency for solar cell with metal-oxide-semiconductor diode

被引：4
|
作者：
Matsuo, N. [1 ]
Kobayashi, T. [1 ]
Heya, A. [1 ]
机构：
[1] Univ Hyogo, Dept Mat Sci & Chem, Himeji, Hyogo 6712280, Japan
来源：
ELECTRONICS LETTERS | 2013年 / 49卷 / 21期
关键词：
MIS devices; semiconductor diodes; solar cells; conversion efficiency improvement; solar cell; metal-oxide-semiconductor diode; power generation layer; field-effect; gate voltage application; surface recombination velocity;
D O I：
10.1049/el.2013.2485
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The novel structure of a solar cell is presented that has the metal-oxide-semiconductor diode at the side wall of the power generation layer. The influence of the field-effect on the recombination of carriers is simulated and the increase of the conversion efficiency of the solar cell by the gate voltage application is discussed. In addition, the relationship between the effect of the gate voltage application on the conversion efficiency, the lifetime and the surface recombination velocity is discussed.
引用
收藏
页码：1351 / 1353
页数：2
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