A Superjunction Schottky Barrier Diode With Trench Metal-Oxide-Semiconductor Structure

被引：5
|
作者：
Wang, Ying [1 ]
Xu, Likun [1 ]
Miao, Zhikun [1 ]
机构：
[1] Harbin Engn Univ, Coll Informat & Commun Engn, Harbin 150001, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 12期
关键词：
Leakage current; reverse recovery; Schottky barrier diode (SBD); softness factor; superjunction (SJ); trench metal-oxide-semiconductor (MOS) structure; PINCH-RECTIFIER;
D O I：
10.1109/LED.2012.2220117
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A superjunction Schottky barrier diode with trench metal-oxide-semiconductor (MOS) structure (TM-SJ-SBD) is proposed and studied by 2-D numerical simulations. The device shows the decreasing leakage current, as compared with the common superjunction Schottky barrier diode (SJ-SBD), without considerable degradation of forward characteristics. With optimized parameters, the TM-SJ-SBD attains a breakdown voltage of 178 V, which is similar to that of the SJ-SBD, and a leakage current of 1.57 x 10(-5) A/cm(2) at 130-V reverse bias, which is 46.5% smaller than that of the SJ-SBD. In addition, the TM-SJ-SBD achieves softer reverse recovery characteristics, and the reverse recovery peak current is 67.9% smaller than that of the SJ-SBD.
引用
收藏
页码：1744 / 1746
页数：3
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