Development of High Temperature Lateral HV and LV JFETs in 4H-SiC

被引：0

作者：

Zhang, Y. ^{[1
]}

Sheng, K. ^{[1
]}

Su, M. ^{[1
]}

Zhao, J. H. ^{[1
]}

Alexandrov, P. ^{[2
]}

Fursin, L. ^{[2
]}

机构：

[1] Rutgers State Univ, Dept Elect & Comp Engn, SiCLAB, 94 Brett Rd, Piscataway, NJ 08854 USA

[2] United Silicon Carbide Inc, New Brunswick, NJ 08901 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷

关键词：

Junction field-effect transistor (JFET); power integrated circuits; high temperature; silicon carbide (SiC);

D O I：

10.4028/www.scientific.net/MSF.600-603.1091

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A series of high voltage (HV) and low voltage (LV) lateral JFETs are successfully developed in 4H-SiC based on the vertical channel LJFET (VC-LJFET) device platform. Both room temperature and 300 degrees C characterizations are presented. The HV JFET shows a specific-on resistance of 12.8 m Omega.cm(2) and is capable of conducting current larger than 3 A at room temperature. A threshold voltage drop of about 0.5V for HV and LV JFETs is observed when temperature varies from room temperature to 300 degrees C. The measured increase of specific-on resistance with temperature due to a reduction of electron mobility agrees with the numerical prediction. The first demonstration of SiC power integrated circuits (PIC) is also reported, which shows 5 MHz switching at V-DS of 200 V and on-state current of 0.4 A.

引用

页码：1091 / +

页数：2

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