CHARACTERISTICS OF LOVE WAVE DEVICE WITH NI PILLARS ON ZNO/R-SAPPHIRE STRUCTURE

被引:0
|
作者
Liu, Xiao-qing
Shang, Shu-lin
Wang, Yan [1 ]
Liang, Su-peng
机构
[1] Nanjing Univ Posts & Telecommun, Coll Elect & Opt Engn, Nanjing 210046, Peoples R China
基金
中国国家自然科学基金;
关键词
Phononic Crystals; Finite Element Method; Electromechanical Coupling Coefficient; ACOUSTIC-WAVES; CRYSTAL;
D O I
10.1109/spawda48812.2019.9019271
中图分类号
O42 [声学];
学科分类号
070206 ; 082403 ;
摘要
Phononic crystals (PnCs) have attracted considerable attention in recent years because of the ability to control and manipulate acoustic and elastic wave propagation. A Love wave device composed of Nickel pillars on (110)ZnO/R-sapphire substrate is constructed by using COMSOL Multiphysics. The characteristics of the device, including the phase velocity (v(p)) and the electromechanical coupling coefficient (k(2)), are theoretically analyzed by finite element method (FEM). The results show that the 1st mode of love waves appear at h(ZnO)/lambda=0.0625, while the point of occurrence is 0.31 at PnCs-free SAW structure. And the maximum electromechanical coupling coefficient(k(2)) of 3.27% is obtained by optimizing the structure of Nickel pillars, which is much higher than that of PnCs-free structure. All of the results indicate that the performances of the love wave device based on Nickel pillars/(110)ZnO/R-sapphire structure are superior to that of PnCs-free structure. And it provides a theoretical basis for designing Love wave devices with high frequency.
引用
收藏
页码:373 / 377
页数:5
相关论文
共 50 条
  • [41] Love wave in ZnO/SiO2/Si structure with initial stresses
    Su, J
    Kuang, ZB
    Liu, H
    JOURNAL OF SOUND AND VIBRATION, 2005, 286 (4-5) : 981 - 999
  • [42] Growth and orientation relationships of Ni and Cu films annealed on slightly miscut (1 (1)over-bar 0 2) r-sapphire substrates
    Chatain, Dominique
    Courtois, Blandine
    Ozerov, Igor
    Bozzolo, Nathalie
    Kelly, Madeleine
    Rohrer, Gregory S.
    Wynblatt, Paul
    JOURNAL OF CRYSTAL GROWTH, 2019, 508 : 24 - 33
  • [43] Polarization properties of nonpolar ZnO films grown on R-sapphire substrates using high-temperature H2O generated by a catalytic reaction
    Kato, Ariyuki
    Ono, Shotaro
    Ikeda, Munenori
    Tajima, Ryouichi
    Adachi, Yudai
    Yasui, Kanji
    THIN SOLID FILMS, 2017, 644 : 29 - 32
  • [44] An investigation of Love wave devices based on ZnO:Mg/LiNbO3 structure
    Chang, Ren-Chuan
    Chu, Sheng-Yuan
    Yeh, Po-Wen
    Hong, Cheng-Shong
    Huang, Hsin-Hsuan
    Huang, Yi-Jen
    SENSORS AND ACTUATORS B-CHEMICAL, 2008, 132 (01): : 312 - 318
  • [45] Influences of reflector gratings on the properties of love wave acoustic sensors in ZnO/Quartz structure
    Chu, SY
    Water, W
    INTEGRATED FERROELECTRICS, 2003, 51 : 121 - 125
  • [46] The Influence of the multilayer ZnO-HfOx structure on the characteristics of a lightemitting device
    Liu, Lingguang
    Zhang, Xiaoning
    Yu, Bojiang
    Lin, Yuanyuan
    Zhang, He
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2017, 32 (05)
  • [47] Optical emission characteristics of semipolar (1 1 (2)over-bar 2) GaN light-emitting diodes grown on m-sapphire and stripe-etched r-sapphire
    Leung, Benjamin
    Zhang, Yu
    Yerino, Christopher D.
    Han, Jung
    Sun, Qian
    Chen, Zhen
    Lester, Steve
    Liao, Kuan-Yung
    Li, Yun-Li
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 27 (02)
  • [48] Surface acoustic wave ultraviolet photodetectors using epitaxial ZnO multilayers grown on r-plane sapphire
    Emanetoglu, NW
    Zhu, J
    Chen, Y
    Zhong, J
    Chen, YM
    Lu, YC
    APPLIED PHYSICS LETTERS, 2004, 85 (17) : 3702 - 3704
  • [49] Simulation of characteristics of ZnO/diamond/Si structure surface acoustic wave
    Zhou Zhen-Kai
    Wei Li-Ming
    Feng Jie
    ACTA PHYSICA SINICA, 2013, 62 (10)
  • [50] Interfacial structure of a-plane ZnO grown on r-plane sapphire by pulsed laser deposition
    Peng, Chun-Yen
    Wang, Wei-Lin
    Ho, Yen-Teng
    Tian, Jr-Sheng
    Chang, Li
    MATERIALS LETTERS, 2013, 94 : 165 - 168