A single-electron three-input AND gate

被引：17
|
作者：
Tsimperidis, I [1 ]
Karafyllidis, I [1 ]
Thanailakis, A [1 ]
机构：
[1] Democritus Univ Thrace, Dept Elect & Comp Engn, Lab EEMT, GR-67100 Xanthi, Greece
来源：
MICROELECTRONICS JOURNAL | 2002年 / 33卷 / 03期
关键词：
single-electron circuits; logic gates; nanoelectronics;
D O I：
10.1016/S0026-2692(01)00151-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The design of a single-electron AND gate with three inputs is presented for the first time in this paper. The operation of this gate has been simulated using a well-known single-electron circuit simulator. Furthermore, the stability of its operation has been studied by constructing the free-energy history diagram, and by constructing and analyzing the corresponding three-dimensional stability plot, using Monte Carlo simulation. Simulation has verified the correct and stable operation of the gate. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：191 / 195
页数：5
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