Anomalous Hall effect engineering via interface modification in Co/Pt multilayers

被引：25
|
作者：
Jiang, Shao-Long [1 ]
Chen, Xi [1 ]
Li, Xu-Jing [1 ]
Yang, Kang [1 ]
Zhang, Jing-Yan [1 ]
Yang, Guang [1 ]
Liu, Yi-Wei [1 ]
Lu, Jin-Hui [1 ]
Wang, Dong-Wei [2 ]
Teng, Jiao [1 ]
Yu, Guang-Hua [1 ]
机构：
[1] Univ Sci & Technol Beijing, Dept Mat Phys & Chem, Beijing 100083, Peoples R China
[2] Natl Ctr Nanosci & Nanotechnol, Beijing 100190, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 11期
关键词：
Compendex;
D O I：
10.1063/1.4931100
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An enhanced anomalous Hall effect (AHE) is observed via interface modification in MgO/[Co/Pt](2)/Co/MgO multilayers, due to the insertion of a Hf metal layer at the Co/MgO interface. It is shown that the saturation anomalous Hall resistivity is 215% larger than that in the multilayers without Hf insertion. More importantly, thermally stable AHE and perpendicular magnetic anisotropy features are obtained in MgO/[Co/Pt](2)/Co/Hf/MgO multilayers. The AHE is improved for sample MgO/[Co/Pt](2)/Co/Hf/MgO by annealing, which is attributed to the enhancement of the side jump contribution. (C) 2015 AIP Publishing LLC.
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页数：4
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