Anomalous Hall effect engineering via interface modification in Co/Pt multilayers

被引：25

作者：

Jiang, Shao-Long ^{[1
]}

Chen, Xi ^{[1
]}

Li, Xu-Jing ^{[1
]}

Yang, Kang ^{[1
]}

Zhang, Jing-Yan ^{[1
]}

Yang, Guang ^{[1
]}

Liu, Yi-Wei ^{[1
]}

Lu, Jin-Hui ^{[1
]}

Wang, Dong-Wei ^{[2
]}

Teng, Jiao ^{[1
]}

Yu, Guang-Hua ^{[1
]}

机构：

[1] Univ Sci & Technol Beijing, Dept Mat Phys & Chem, Beijing 100083, Peoples R China

[2] Natl Ctr Nanosci & Nanotechnol, Beijing 100190, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 11期

关键词：

Compendex;

D O I：

10.1063/1.4931100

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An enhanced anomalous Hall effect (AHE) is observed via interface modification in MgO/[Co/Pt](2)/Co/MgO multilayers, due to the insertion of a Hf metal layer at the Co/MgO interface. It is shown that the saturation anomalous Hall resistivity is 215% larger than that in the multilayers without Hf insertion. More importantly, thermally stable AHE and perpendicular magnetic anisotropy features are obtained in MgO/[Co/Pt](2)/Co/Hf/MgO multilayers. The AHE is improved for sample MgO/[Co/Pt](2)/Co/Hf/MgO by annealing, which is attributed to the enhancement of the side jump contribution. (C) 2015 AIP Publishing LLC.

引用

页数：4

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