A new functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT)

被引：0
|
作者：
Liu, WC
Tsai, JH
Laih, LW
Chen, HR
Cheng, SY
Wang, WC
Lin, PH
Chen, JY
机构：
来源：
1996 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES, PROCEEDINGS | 1996年
关键词：
D O I：
10.1109/COMMAD.1996.610117
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT) with pseudomorphic base structure is presented. Due to the insertion of InGaAs quantum well between emitter-base (E-B) junction, the valence band discontinuity can be enhanced and a high emitter injection efficiency may be achieved. In addition, an interesting S-shaped multiple negative differential resistance (MNDR) phenomenon is observed under the inverted operation mode. This may be attributed to an avalanche multiplication and sequential two-stage barrier lowering effect resulting from electrons accumulation at AlGaAs/GaAs heterointerface and InGaAs quantum well, respectively.
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页码：247 / 250
页数：4
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