Thermal effect on current gains of an AlGaAs/GaAs heterostructure-emitter bipolar transistor

The temperature effect on current gains is presented for an AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT). Experimental results show that the HEBT has much less temperature sensitivity in current gain than a heterojunction bipolar transistor. The current gains for the HEBT are almost constant with the substrate temperature at a high current regime. This indicates that the HEBT could be a good candidate for power applications. (C) 1999 American Institute of Physics. [S0003-6951(99)04312-0].