Simulated analysis for InGaP/GaAs heterostructure-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure

A novel InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with InGaAs/GaAs super] attice-base structure is proposed and demonstrated by two-dimensional analysis. As compared with the traditional HEBT, the studied superlattice-base device exhibits a higher collector current, a higher current gain of 246, and a lower base-emitter (B-E) turn-on voltage of 0.966 V at a current level of 1 mu A, attributed to the increased charge storage of minority carriers in the InGaAs/GaAs superlattice- base region by tunneling behavior. The low turn-on voltage can reduce the operating voltage and collector-emitter offset voltage for low power consumption in circuit applications. (C) 2007 Elsevier Ltd. All rights reserved.