The role of dielectric screening of electron-hole interaction in van der Waals heterostructures is theoretically investigated. A comparison between models available in the literature for describing these interactions is made and the limitations of these approaches are discussed. A simple numerical solution of Poisson's equation for a stack of dielectric slabs based on a transfer matrix method is developed, enabling the calculation of the electron-hole interaction potential at very low computational cost and with reasonable accuracy. Using different potential models, direct and indirect exciton binding energies in these systems are calculated within Wannier-Mott theory, and a comparison of theoretical results with recent experiments on excitons in two-dimensional materials is discussed.
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Inst Tecnol Aeronaut, DCTA, Grp Mat Semicond & Nanotecnol, BR-12228900 Sao Jose Dos Campos, BrazilInst Tecnol Aeronaut, DCTA, Grp Mat Semicond & Nanotecnol, BR-12228900 Sao Jose Dos Campos, Brazil
Lucatto, Bruno
Koda, Daniel S.
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Inst Tecnol Aeronaut, DCTA, Grp Mat Semicond & Nanotecnol, BR-12228900 Sao Jose Dos Campos, Brazil
MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USAInst Tecnol Aeronaut, DCTA, Grp Mat Semicond & Nanotecnol, BR-12228900 Sao Jose Dos Campos, Brazil
Koda, Daniel S.
Bechstedt, Friedhelm
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Friedrich Schiller Univ, Inst Festkorpertheorie & Opt, Max Wien Pl 1, D-07743 Jena, GermanyInst Tecnol Aeronaut, DCTA, Grp Mat Semicond & Nanotecnol, BR-12228900 Sao Jose Dos Campos, Brazil
Bechstedt, Friedhelm
Marques, Marcelo
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Inst Tecnol Aeronaut, DCTA, Grp Mat Semicond & Nanotecnol, BR-12228900 Sao Jose Dos Campos, BrazilInst Tecnol Aeronaut, DCTA, Grp Mat Semicond & Nanotecnol, BR-12228900 Sao Jose Dos Campos, Brazil
Marques, Marcelo
Teles, Lara K.
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Inst Tecnol Aeronaut, DCTA, Grp Mat Semicond & Nanotecnol, BR-12228900 Sao Jose Dos Campos, BrazilInst Tecnol Aeronaut, DCTA, Grp Mat Semicond & Nanotecnol, BR-12228900 Sao Jose Dos Campos, Brazil
机构:
Department of Materials Science and Engineering, City University of Hong KongDepartment of Materials Science and Engineering, City University of Hong Kong
Junlei Qi
Zongxiao Wu
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Department of Materials Science and Engineering, City University of Hong KongDepartment of Materials Science and Engineering, City University of Hong Kong
Zongxiao Wu
Wenbin Wang
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Department of Materials Science and Engineering, City University of Hong KongDepartment of Materials Science and Engineering, City University of Hong Kong
Wenbin Wang
Kai Bao
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Department of Materials Science and Engineering, City University of Hong KongDepartment of Materials Science and Engineering, City University of Hong Kong
Kai Bao
Lingzhi Wang
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Department of Materials Science and Engineering, City University of Hong KongDepartment of Materials Science and Engineering, City University of Hong Kong
Lingzhi Wang
Jingkun Wu
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Department of Materials Science and Engineering, City University of Hong KongDepartment of Materials Science and Engineering, City University of Hong Kong
Jingkun Wu
Chengxuan Ke
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Department of Materials Science and Engineering, City University of Hong KongDepartment of Materials Science and Engineering, City University of Hong Kong
Chengxuan Ke
Yue Xu
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Department of Materials Science and Engineering, City University of Hong KongDepartment of Materials Science and Engineering, City University of Hong Kong
Yue Xu
Qiyuan He
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Department of Materials Science and Engineering, City University of Hong KongDepartment of Materials Science and Engineering, City University of Hong Kong
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Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USAUniv Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
Jin, Chenhao
Ma, Eric Yue
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Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA
SLAC Natl Accelerator Lab, Menlo Pk, CA 94025 USAUniv Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
Ma, Eric Yue
Karni, Ouri
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Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USAUniv Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
Karni, Ouri
Regan, Emma C.
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Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
Univ Calif Berkeley, Grad Grp Appl Sci & Technol, Berkeley, CA 94720 USA
Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USAUniv Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
Regan, Emma C.
Wang, Feng
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Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA
Univ Calif Berkeley, Kavli Energy NanoSci Inst, Berkeley, CA 94720 USA
Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USAUniv Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
Wang, Feng
Heinz, Tony F.
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Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA
SLAC Natl Accelerator Lab, Menlo Pk, CA 94025 USAUniv Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA