Electrostatics of electron-hole interactions in van der Waals heterostructures

被引:25
|
作者
Cavalcante, L. S. R. [1 ]
Chaves, A. [1 ]
Van Duppen, B. [2 ]
Peeters, F. M. [1 ,2 ]
Reichman, D. R. [3 ]
机构
[1] Univ Fed Ceara, Dept Fis, Caixa Postal 6030,Campus Pici, BR-60455900 Fortaleza, Ceara, Brazil
[2] Univ Antwerp, Dept Phys, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
[3] Columbia Univ, Dept Chem, New York, NY 10027 USA
基金
美国国家科学基金会;
关键词
2-DIMENSIONAL MATERIALS; INTERLAYER EXCITONS; SEMICONDUCTOR; MOSE2/WSE2; TWIST;
D O I
10.1103/PhysRevB.97.125427
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The role of dielectric screening of electron-hole interaction in van der Waals heterostructures is theoretically investigated. A comparison between models available in the literature for describing these interactions is made and the limitations of these approaches are discussed. A simple numerical solution of Poisson's equation for a stack of dielectric slabs based on a transfer matrix method is developed, enabling the calculation of the electron-hole interaction potential at very low computational cost and with reasonable accuracy. Using different potential models, direct and indirect exciton binding energies in these systems are calculated within Wannier-Mott theory, and a comparison of theoretical results with recent experiments on excitons in two-dimensional materials is discussed.
引用
收藏
页数:9
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