Symmetry-Controlled Electron-Phonon Interactions in van der Waals Heterostructures

被引:26
|
作者
Chen, Chen [1 ]
Chen, Xiaolong [1 ]
Yu, Hongyi [2 ,3 ]
Shao, Yuchuan [1 ,8 ]
Guo, Qiushi [1 ]
Deng, Bingchen [1 ]
Lee, Sungmin [4 ,5 ]
Ma, Chao [1 ]
Watanabe, Kenji [6 ]
Taniguchi, Takashi [6 ]
Park, Je-Geun [4 ,5 ]
Huang, Shengxi [7 ]
Yao, Wang [2 ,3 ]
Xia, Fengnian [1 ]
机构
[1] Yale Univ, Dept Elect Engn, New Haven, CT 06511 USA
[2] Univ Hong Kong, Dept Phys, Hong Kong, Peoples R China
[3] Univ Hong Kong, Ctr Theoret & Computat Phys, Hong Kong, Peoples R China
[4] Inst for Basic Sci Korea, Ctr Correlated Electron Syst, Seoul 08826, South Korea
[5] Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South Korea
[6] Natl Inst Mat Sci, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
[7] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA
[8] Apple Inc, 37100 Fremont Blvd, Fremont, CA 94536 USA
关键词
electron-phonon coupling; Raman mode; symmetry; chirality; excitonic intervalley scattering; anisotropy; VALLEY POLARIZATION; EXCITONS; MOS2; SPECTROSCOPY; GENERATION; COHERENCE;
D O I
10.1021/acsnano.8b07290
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Light-matter interactions in the van der Waals (vdWs) heterostructures exhibit many fascinating properties which can be harnessed to realize optoelectronic applications and probe fundamental physics. Moreover, the electron-phonon interaction in the vdWs heterostructures can have a profound impact on light matter interaction properties because light-excited electrons can strongly couple with phonons in heterostructures. Here, we report symmetry controlled electron-phonon interactions in engineered two-dimensional (2D) material/silicon dioxide (SiO2) vdWs heterostructures. We observe two Raman modes arising from originally Raman-silent phonon modes in SiO2. The Raman modes have fixed peak positions regardless of the type of 2D materials in the heterostructures. Interestingly, such Raman emissions exhibit various symmetry properties in heterostructures with 2D materials of different crystalline structures, controlled by their intrinsic electronic band properties. In particular, we reveal chiral Raman emissions with reversed helicity in contrast to that of typical valley polarization in honeycomb 2D materials due to the phonon-assisted excitonic intervalley scattering process induced by electron-hole exchange interaction. The observation of the symmetry controlled Raman scattering process not only provides a deep insight into the microscopic mechanisms of electron-phonon interactions in vdWs heterostructures but also may lead to the realization of valley-phononic devices.
引用
收藏
页码:552 / 559
页数:8
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