Accurate simulation models yield high-efficiency power amplifier design

被引：0
|
作者：
Akamatsu, S
Baylis, C
Dunleavy, L
机构：
[1] Univ S Florida, Tampa, FL 33620 USA
[2] Univ S Florida & Modelith, Tampa, FL USA
来源：
IEEE MICROWAVE MAGAZINE | 2005年 / 6卷 / 04期
关键词：
D O I：
10.1109/MMW.2005.1580351
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A Class-AB power amplifier (PA) application circuit targeting 1.5 GHz was introduced and benchmarked a systematic design procedure enabled by use of high-accuracy models for active and passive circuit elements. A Fujitsu FLL120MK GaAs FET device was chosen to satisfy the power, efficiency, and gain design goals. The nonlinear transistor model and passive-surface mount device models from Mdelithics were used, along with built-in MS line models in ADS to accomplish the design optimization and simulation. The measurement result show that the frequency shifted around 200 MHz.
引用
收藏
页码：114 / 124
页数：11
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