The design and realization of high-efficiency power amplifier with drain efficiency over 80% at 3.5 GHz

被引：0
|
作者：
Lei, Qi [1 ]
You, Fei [1 ]
Dong, Lei [1 ]
He, Songbai [1 ]
Hu, Zhebin [1 ]
机构：
[1] Univ Elect Sci & Technol China, Sch Elect Engn, Chengdu 611731, Peoples R China
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2012年 / 54卷 / 02期
基金：
中国国家自然科学基金;
关键词：
GaN HEMT; inverse Class-F power amplifier; nonlinear capacitor; high efficiency; digital predistortion;
D O I：
10.1002/mop.26577
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This article presents the full design methodology and implementation of inverse Class-F power amplifier with a commercial high-power GaN HEMT. For a 3.48 GHz continuous wave signal, the measurement results show state-of-the-art power-added-efficiency (PAE) of 76.7%, drain efficiency of 81.1%, gain of 12.9 dB, and output power of 39.9 dBm. Within a bandwidth of 200 MHz, drain efficiency and output power are maintained above 60% and 38.5 dBm, respectively. With digital predistortion, it achieves -45 dBc of adjacent channel leakage ratio for a 2.5 MHz wideband signal with a peak-to-average power ratio of 8.9 dB, with an average PAE of 36.7%. (C) 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:521-525, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26577
引用
收藏
页码：521 / 525
页数：5
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