Negative Differential Resistance in Buried-Channel GexC1-x pMOSFETs

被引：6
|
作者：
Liu, En-Shao [1 ]
Kelly, David Q. [2 ]
Donnelly, Joseph P. [1 ]
Tutuc, Emanuel [1 ]
Banerjee, Sanjay K. [1 ]
机构：
[1] Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA
[2] Texas Instruments Inc, Dallas, TX 75243 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 02期
关键词：
Charge traps; germanium/carbon alloy (GexC1-x); germanium (Ge); negative differential resistance (NDR); pMOSFETs; real-space transfer (RST); REAL-SPACE TRANSFER; ELECTRON-TRANSFER; GERMANIUM; TRANSPORT; HETEROSTRUCTURES; VELOCITY; DEVICES; GATE; SI;
D O I：
10.1109/LED.2008.2009364
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We study the device characteristics of Si-capped GexC1-x pMOSFETs from room temperature down to 77 K. The output characteristics of these devices reveal a negative differential resistance (NDR) at temperatures below 150 K. Our measurements indicate a higher effective carrier mobility in the buried-channel GexC1-x. with respect to the Si-reference sample, which suggests that the observed NDR is due to real-space transfer of hot holes from the higher mobility GexC1-x channel layer into the lower mobility Si cap layer.
引用
收藏
页码：136 / 138
页数：3
相关论文
共 50 条
  • [1] Structural characterization of Ge microcrystals in GexC1-x films
    Carles, Robert, 1600, (31):
  • [2] Structure of GexC1-x films prepared by magnetron reactive sputtering
    Liu, Zhengtang
    Geng, Dongsheng
    Song, Jianquan
    Zhu, Jingzhi
    Zheng, Xiulin
    Jinshu Rechuli Xuebao/Transactions of Metal Heat Treatment, 2000, 21 (02): : 95 - 99
  • [3] STRUCTURAL CHARACTERIZATION OF GE MICROCRYSTALS IN GEXC1-X FILMS
    CARLES, R
    MLAYAH, A
    AMJOUD, M
    REYNES, A
    MORANCHO, R
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (11): : 3511 - 3514
  • [4] Study on preparation technology of GexC1-x film on ZnS substrate
    Dong, LH
    Fu, XH
    Dong, Y
    Sun, YJ
    ICO20: OPTICAL DESIGN AND FABRICATION, 2006, 6034
  • [5] Design and preparation of GexC1-x inhomogeneous antireflective and protective films
    2001, Science Press (31):
  • [6] STRUCTURE AND PROPERTIES OF NONHYDROGEN GexC1-x FILMS PREPARED BY PLD
    Cheng, Yong
    Huang, Guojun
    Lu, Yimin
    Guo, Yanlong
    Mi, Chaowei
    Cao, Haiyuan
    SURFACE REVIEW AND LETTERS, 2018, 25 (07)
  • [7] 射频反应溅射GexC1－x薄膜的特性
    刘正堂，朱景芝，许念坎，郑修麟
    红外技术, 1996, (05) : 19 - 22+14
  • [8] Strong low-frequency noise in buried-channel pMOSFETs under inversion conditions
    Lukyanchikova, N
    Petrichuk, M
    Garbar, N
    Simoen, E
    Claeys, C
    SIXTH QUANTUM 1/F NOISE AND OTHER LOW FREQUENCY FLUCTUATIONS IN ELECTRON DEVICES SYMPOSIUM, 1996, (371): : 134 - 138
  • [9] 反应溅射GeXC1-X薄膜的沉积速率
    刘正堂
    朱景芝
    宋建权
    郑修麟
    材料工程, 1998, (02) : 7 - 9
  • [10] Modeling of electron substrate and gate current for single-drain buried-channel pMOSFETs
    Sheu, Chorng-Jye
    EDSSC: 2007 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, VOLS 1 AND 2, PROCEEDINGS, 2007, : 505 - 508
12345