Ohmic contacts to n-type AlGaN and nitride HEMT epilayers

被引：2
|
作者：
Wang, PK [1 ]
Schweitz, KO [1 ]
Pribicko, TG [1 ]
Mohney, SE [1 ]
Pophristic, M [1 ]
Gotthold, D [1 ]
机构：
[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
来源：
2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS | 2001年
关键词：
D O I：
10.1109/ISDRS.2001.984474
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：199 / 200
页数：2
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