Electroreflectance spectroscopy on CdS and Zn(O,S) buffer layers in Cu(In,Ga)Se2 solar cells: Suppression of interference effects

被引：0

作者：

Seeger, Jasmin ^{[1
]}

Piesch, Ulrich ^{[1
]}

Witte, Wolfram ^{[2
]}

Hariskos, Dimitrios ^{[2
]}

Kiowski, Oliver ^{[2
]}

Kalt, Heinz ^{[1
]}

Hetterich, Michael ^{[1
,3
]}

机构：

[1] Karlsruhe Inst Technol KIT, Inst Appl Phys, D-76131 Karlsruhe, Germany

[2] Zentrum Sonnenenergie & Wasserstoff Forsch Baden, D-70563 Stuttgart, Germany

[3] Karlsruhe Inst Technol KIT, Light Technol Inst, D-76131 Karlsruhe, Germany

来源：

2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) | 2018年

关键词：

CIGS; Buffer; CdS; Zn(O; S); Electroreflectance; Spectroscopy; CRITICAL-POINT PARAMETERS; BAND-STRUCTURE;

D O I：

暂无

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

Electroreflectance (ER) spectroscopy is utilized to study Cu(In,Ga)Se-2 solar cells with solution -grown CdS and Zn(O,S) buffer layers. Due to the weak ER signals of the thin buffer layers, interference effects can have a strong influence on the ER spectra. To suppress these interference effects, the thickness of the ZnO window layer, and hence the interference conditions, are changed by a step-by-step etching process while keeping the solar cell operational. This method was successfully applied to solar cells with CdS buffer. First results from transferring this approach to alternative Zn(O,S) buffer layers are also reported.

引用

页码：1949 / 1952

页数：4

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