Effects of CdS buffer layers on photoluminescence properties of Cu(In,Ga)Se2 solar cells

被引：69

作者：

Shirakata, Sho ^{[1
]}

Ohkubo, Katsuhiko ^{[1
]}

Ishii, Yasuyuki ^{[2
]}

Nakada, Tokio ^{[2
]}

机构：

[1] Ehime Univ, Dept Elect & Elect Engn, Matsuyama, Ehime 7908577, Japan

[2] Aoyama Gakuin Univ, Dept Elect Engn & Elect, Kanagawa 2298558, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2009年 / 93卷 / 6-7期

关键词：

CIGS solar cells; Chemical-bath deposition; CBD-CdS; Photoluminescence; Time-resolved photoluminescence; THIN-FILMS;

D O I：

10.1016/j.solmat.2008.11.043

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Photoluminescence (PL) have been studied on Cu(In,Ga)Se-2 (CIGS) thin films, CdS/CIGS and CIGS solar cells, to clarify the carrier recombination process. The chemical-bath deposition (CBD) of the CdS buffer layer on the CIGS thin film leads to (i) the enhancement of near-band-edge PL intensity by a factor of 2-3, (ii) change in energy of the defect-related PL and (iii) the slight change in the decay time. They are related not only to the minimization of the surface recombination but also to the modification of native defects at the Cu-poor surface of CIGS by the occupation of Cd atom at the Cu site. A donor-acceptor pair PL at low-temperature and temperature-dependent PL have been studied. They are discussed in terms of the impurity and defect levels created in the CIGS film during the CBD-CdS process. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：988 / 992

页数：5

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