Study on sputtering Zn(O,S) buffer layers for eco-friendly Cu(In,Ga)Se2 solar cells

被引：1
|
作者：
Shi, Si-han [1 ,2 ]
Fan, Yu [1 ,2 ]
He, Zhi-chao [1 ,2 ]
Zhou, Zhi-qiang [1 ,2 ]
Liu, Fang-fang [1 ,2 ]
Zhang, Yi [1 ,2 ]
Tang, An-dong [3 ]
Sun, Yun [1 ,2 ]
Liu, Wei [1 ,2 ]
机构：
[1] Inst Photoelect Thin Film Devices & Technol, Tianjin Key Lab Thin Film Devices & Technol, Tianjin 300350, Peoples R China
[2] Nankai Univ, Tianjin 300350, Peoples R China
[3] Hanergy Heyuan Mobile Energy Intelligence Manufac, Beijing 100031, Peoples R China
来源：
OPTOELECTRONICS LETTERS | 2019年 / 15卷 / 06期
基金：
中国国家自然科学基金;
关键词：
EFFICIENCY; DEPOSITION;
D O I：
10.1007/s11801-019-9016-2
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
An eco-friendly Zn(O,S) film with a wider band gap is emerging as one of the promising Cd-free replacement material, which can be deposited by radio frequency sputtering. The effect of sputtering pressure on the Zn(O,S) films properties and the devices performance are studied systematically. At high pressure, the ZnS phase is found in the Zn(O,S) films resulting in a higher barrier at Zn(O,S) /CIGS interface which would lead to a low recombination activation energy (Ea). By reducing sputtering pressure, single phase of Zn(O,S) films are conducive to carrier transport as well as promote the films electric properties, ultimately improving the performance of Zn(O,S)/CIGS solar cells.
引用
收藏
页码：435 / 438
页数：4
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