Effects of number of quantum wells and Shockley-Read-Hall recombination in deep-ultraviolet light-emitting diodes

被引：7
|
作者：
Chen, Fang-Ming [1 ]
Huang, Man-Fang [1 ]
Chang, Jih-Yuan [2 ]
Kuo, Yen-Kuang [3 ]
机构：
[1] Natl Changhua Univ Educ, Inst Photon, Changhua 500, Taiwan
[2] Natl Changhua Univ Educ, Ctr Teacher Educ, Changhua 500, Taiwan
[3] Natl Changhua Univ Educ, Dept Phys, Changhua 500, Taiwan
来源：
OPTICS LETTERS | 2020年 / 45卷 / 13期
关键词：
SCREW DISLOCATIONS;
D O I：
10.1364/OL.397140
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Effects of the number of quantum wells (QWs) and Shockley-Read-Hall (SRH) recombination in deep-ultraviolet (DUV) light-emitting diodes (LEDs) are investigated theoretically. Simulation results show that, for DUV LEDs with high crystalline quality, light output power increases with an increasing number of QWs. As for the DUV LEDs with poor crystalline quality, light output power may decrease with an increasing number of QWs due to the deteriorated SRH recombination. The injection current density is also an important factor regarding the impact of the number of QWs. When operated at low current density, for the DUV LED with poor crystalline quality, light output power may decrease with an increasing number of QWs. (C) 2020 Optical Society of America
引用
收藏
页码：3749 / 3752
页数：4
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