Deep ultraviolet light-emitting diodes using quaternary AlInGaN multiple quantum wells

被引：53
|
作者：
Shatalov, M [1 ]
Zhang, J [1 ]
Chitnis, AS [1 ]
Adivarahan, V [1 ]
Yang, J [1 ]
Simin, G [1 ]
Khan, MA [1 ]
机构：
[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA
来源：
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2002年 / 8卷 / 02期
关键词：
epitaxial growth; light-emitting diodes; lighting; quantum-well devices; ultraviolet generation;
D O I：
10.1109/2944.999185
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we report on the growth, fabrication, and characterization of deep ultraviolet (UV) light-emitting diodes (LEDs) with quaternary AlInGaN-AlInGaN multiple quantum wells (MQWs) in the active region. These high quality quaternary MQWs were deposited over sapphire and n-SiC substrates using a novel pulsed atomic layer epitaxy (PALE) technique. LEDs with peak emission wavelengths from 305-340 nm were fabricated and characterized. Using square geometry devices over sapphire and n-SiC substrates we studied the role of current crowding. Numerical simulation results are also provided to explain the observed current-voltage and light-emission characteristics.
引用
收藏
页码：302 / 309
页数：8
相关论文
共 50 条
  • [1] Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wells
    Adivarahan, V
    Chitnis, A
    Zhang, JP
    Shatalov, M
    Yang, JW
    Simin, G
    Khan, MA
    Gaska, R
    Shur, MS
    [J]. APPLIED PHYSICS LETTERS, 2001, 79 (25) : 4240 - 4242
  • [2] Quaternary AlInGaN multiple quantum wells for ultraviolet light emitting diodes
    Zhang, JP
    Adivarahan, V
    Wang, HM
    Fareed, Q
    Kuokstis, E
    Chitnis, A
    Shatalov, M
    Yang, JW
    Simin, G
    Khan, MA
    Shur, M
    Gaska, R
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (9AB): : L921 - L924
  • [3] Stripe geometry ultraviolet light emitting diodes at 305 nanometers using quaternary AlInGaN multiple quantum wells
    Asif Khan, Muhammad
    Adivarahan, Vinod
    Zhang, Jian Ping
    Chen, Changqing
    Kuokstis, Edmundas
    Chitnis, Ashay
    Shatalov, Maxim
    Yang, Jin Wei
    Simin, Grigory
    [J]. Japanese Journal of Applied Physics, Part 2: Letters, 2001, 40 (12 A):
  • [4] Stripe geometry ultraviolet light emitting diodes at 305 nanometers using quaternary AlInGaN multiple quantum wells
    Khan, MA
    Adivarahan, V
    Zhang, JP
    Chen, CQ
    Kuokstis, E
    Chitnis, A
    Shatalov, M
    Yang, JW
    Simin, G
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (12A): : L1308 - L1310
  • [5] Investigations on deep ultraviolet light-emitting diodes with quaternary AlInGaN streamlined quantum barriers for reducing polarization effect
    Li, Kai
    Zeng, Ni
    Liao, Fengbo
    Yin, YiAn
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 2020, 145
  • [6] Enhanced carrier confinement in AlInGaN-InGaN quantum wells in near ultraviolet light-emitting diodes
    Baek, Sung-Ho
    Kim, Jeom-Oh
    Kwon, Min-Ki
    Park, Il-Kyu
    Na, Seok-In
    Kim, Ja-Yeon
    Kim, Bongjin
    Park, Seong-Ju
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (9-12) : 1276 - 1278
  • [7] Quantum-well and localized state emissions in AlInGaN deep ultraviolet light-emitting diodes
    Zhang, J. C.
    Zhu, Y. H.
    Egawa, T.
    Sumiya, S.
    Miyoshi, M.
    Tanaka, M.
    [J]. APPLIED PHYSICS LETTERS, 2007, 91 (22)
  • [8] Design of deep ultraviolet light-emitting diodes with staggered AlGaN quantum wells
    Yang, G. F.
    Xie, F.
    Dong, K. X.
    Chen, P.
    Xue, J. J.
    Zhi, T.
    Tao, T.
    Liu, B.
    Xie, Z. L.
    Xiu, X. Q.
    Han, P.
    Shi, Y.
    Zhang, R.
    Zheng, Y. D.
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2014, 62 : 55 - 58
  • [9] Numerical simulation of AlInGaN ultraviolet light-emitting diodes
    Kuo, Yen-Kuang
    Yen, Sheng-Horng
    Chen, Jun-Rong
    [J]. OPTOELECTRONIC DEVICES: PHYSICS, FABRICATION, AND APPLICATION III, 2006, 6368
  • [10] Quaternary AlInGaN multiple quantum well 368 nm light-emitting diode
    Wang, TC
    Kuo, HC
    Lee, ZH
    Chuo, CC
    Tsai, MY
    Tsai, CE
    Lee, TD
    Lu, TC
    Chi, J
    [J]. JOURNAL OF CRYSTAL GROWTH, 2006, 287 (02) : 582 - 585
12345