High-frequency characterization of thermionic charge transport in silicon-on-insulator nanowire transistors

被引：10

作者：

Betz, A. C. ^{[1
]}

Barraud, S. ^{[2
]}

Wilmart, Q. ^{[3
,4
]}

Placais, B. ^{[3
,4
]}

Jehl, X. ^{[2
]}

Sanquer, M. ^{[2
]}

Gonzalez-Zalba, M. F. ^{[1
]}

机构：

[1] Hitachi Cambridge Lab, Cambridge CB3 0HE, England

[2] UMR E CEA UJF Grenoble 1, INAC, SPSMS, F-38054 Grenoble, France

[3] Univ Paris 06, ENS CNRS UMR 8551, Lab Pierre Aigrain, F-75231 Paris 05, France

[4] Univ Paris Diderot, F-75231 Paris 05, France

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 04期

关键词：

QUANTUM CAPACITANCE;

D O I：

10.1063/1.4863538

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on DC and microwave electrical transport measurements in silicon-on-insulator nano-transistors at low and room temperature. At low source-drain voltage, the DC current and radio frequency response show signs of conductance quantization. We attribute this to Coulomb blockade resulting from barriers formed at the spacer-gate interfaces. We show that at high bias transport occurs thermionically over the highest barrier: Transconductance traces obtained from microwave scattering-parameter measurements at liquid helium and room temperature are accurately fitted by a thermionic model. From the fits we deduce the ratio of gate capacitance and quantum capacitance, as well as the electron temperature. (C) 2014 AIP Publishing LLC.

引用

页数：4

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