Anomalous charge collection from silicon-on-insulator structures

被引：14
|
作者：
Vizkelethy, G
Dodd, PE
Schwank, JR
Shaneyfelt, MR
Walsh, DS
McDaniel, FD
Doyle, BL
机构：
[1] Sandia Natl Labs, Albuquerque, NM 87185 USA
[2] Univ N Texas, Denton, TX 76203 USA
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2003年 / 210卷
关键词：
silicon-on-insulator; single event upset; ion beam induced charge collection; microbeam; broad beam;
D O I：
10.1016/S0168-583X(03)01072-3
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
An increased single event upset cross-section was found in some silicon-on-insulator (SOI) devices in recent experiments. In order to investigate this unexpected increase we performed both broad beam and microbeam experiments on thermal oxide capacitors. Charge collection was measured using ion beam induced charge collection (IBICC) and time resolved IBICC under different biasing conditions. Lateral charge collection profiles were recorded across the top electrode. We found that the collected charge strongly depends on the applied bias and the oxide thickness. Lateral nonuniformity was observed for low bias conditions. In this paper we will give a qualitative explanation for the charge collection mechanism in SOI devices. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：211 / 215
页数：5
相关论文
共 50 条
  • [1] Cylindrical silicon-on-insulator microdosimeter: Charge collection characteristics
    Ziebell, A. L.
    Lim, W. H.
    Reinhard, M. I.
    Cornelius, I.
    Prokopovich, D. A.
    Siegele, R.
    Dzurak, A. S.
    Rosenfeld, A. B.
    [J]. 2007 IEEE NUCLEAR SCIENCE SYMPOSIUM CONFERENCE RECORD, VOLS 1-11, 2007, : 2307 - 2310
  • [2] A Cylindrical Silicon-on-Insulator Microdosimeter: Charge Collection Characteristics
    Ziebell, A. L.
    Lim, W. H.
    Reinhard, M. I.
    Cornelius, I.
    Prokopovich, D. A.
    Siegele, R.
    Dzurak, A. S.
    Rosenfeld, A. B.
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2008, 55 (06) : 3414 - 3420
  • [3] Stabilization of charge at the interface between the buried insulator and silicon in silicon-on-insulator structures
    I. V. Antonova
    [J]. Semiconductors, 2005, 39 : 1153 - 1157
  • [4] Stabilization of charge at the interface between the buried insulator and silicon in silicon-on-insulator structures
    Antonova, IV
    [J]. SEMICONDUCTORS, 2005, 39 (10) : 1153 - 1157
  • [5] Charge fluctuations at the bonding interface in the silicon-on-insulator structures
    I. V. Antonova
    V. A. Stuchinskii
    O. V. Naumova
    D. V. Nikolaev
    V. P. Popov
    [J]. Semiconductors, 2003, 37 : 1303 - 1307
  • [6] Charge fluctuations at the bonding interface in the silicon-on-insulator structures
    Antonova, IV
    Stuchinskii, VA
    Naumova, OV
    Nikolaev, DV
    Popov, VP
    [J]. SEMICONDUCTORS, 2003, 37 (11) : 1303 - 1307
  • [7] Behavior of charge in a buried insulator of silicon-on-insulator structures subjected to electric fields
    Nikolaev, DV
    Antonova, IV
    Naumova, OV
    Popov, VP
    Smagulova, SA
    [J]. SEMICONDUCTORS, 2002, 36 (07) : 800 - 804
  • [8] The Next Step in Cylindrical Silicon-on-Insulator Microdosimetry: Charge Collection Results
    Ziebell, A. L.
    Lai, N. S.
    Lim, W. H.
    Reinhard, M. I.
    Prokopovich, D. A.
    Siegele, R.
    Dzurak, A. S.
    Rosenfeld, A. B.
    [J]. 2008 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE (2008 NSS/MIC), VOLS 1-9, 2009, : 363 - +
  • [9] Behavior of charge in a buried insulator of silicon-on-insulator structures subjected to electric fields
    D. V. Nikolaev
    I. V. Antonova
    O. V. Naumova
    V. P. Popov
    S. A. Smagulova
    [J]. Semiconductors, 2002, 36 : 800 - 804
  • [10] Giant, Anomalous Piezoimpedance in Silicon-on-insulator
    Li, H.
    Lew, C. T. K.
    Johnson, B. C.
    McCallum, J. C.
    Arscott, S.
    Rowe, A. C. H.
    [J]. PHYSICAL REVIEW APPLIED, 2019, 11 (04):
12345