Charge fluctuations at the bonding interface in the silicon-on-insulator structures

被引：0
|
作者：
Antonova, IV [1 ]
Stuchinskii, VA [1 ]
Naumova, OV [1 ]
Nikolaev, DV [1 ]
Popov, VP [1 ]
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Siberian Div, Novosibirsk 630090, Russia
来源：
SEMICONDUCTORS | 2003年 / 37卷 / 11期
关键词：
D O I：
10.1134/1.1626213
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Starting from the data of deep-level transient spectroscopy, the charge fluctuations at the interface between the top Si layer and buried insulator in Si-on-insulator structures are evaluated. The interface was prepared by bonding Si with the thermally oxidized substrate. The magnitude of fluctuations at the interface is found to be equal or exceed (1.5-2.0)x10(11) cm(-2) against the charge background of similar to5x10(11) cm(-2) at this interface. It is shown that the fluctuations are most likely associated with the negative charge at the surface states rather than with the fluctuations of the fixed positive charge within oxide. (C) 2003 MAIK "Nauka/Interperiodica".
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页码：1303 / 1307
页数：5
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