Formation of negatively-charged excitons and charge transfer in quantum dots

被引：2

作者：

Shiraki, Y ^{[1
]}

Ohta, K ^{[1
]}

机构：

[1] Univ Tokyo, Res Ctr Adv Sci & Technol, Meguro Ku, Tokyo 153, Japan

来源：

MICROELECTRONIC ENGINEERING | 1999年 / 47卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(99)00163-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Negatively-charged excitons were assigned in AlGaAs/GaAs modulation-doping structures (MOD) with AlInAs quantum. Peaks observed at zero bias decreased or disappeared with increasing negative bias and new peaks were seen to grow up. These two-group peaks were reasonably assigned respectively as negatively-charged excitons and neutral excitons, since the excess electrons were considered to be extracted from the dot region and formation of negatively-charged excitons was suppressed under high bias.

引用

页码：107 / 109

页数：3

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