Formation of negatively-charged excitons and charge transfer in quantum dots

被引：2
|
作者：
Shiraki, Y [1 ]
Ohta, K [1 ]
机构：
[1] Univ Tokyo, Res Ctr Adv Sci & Technol, Meguro Ku, Tokyo 153, Japan
来源：
MICROELECTRONIC ENGINEERING | 1999年 / 47卷 / 1-4期
关键词：
D O I：
10.1016/S0167-9317(99)00163-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Negatively-charged excitons were assigned in AlGaAs/GaAs modulation-doping structures (MOD) with AlInAs quantum. Peaks observed at zero bias decreased or disappeared with increasing negative bias and new peaks were seen to grow up. These two-group peaks were reasonably assigned respectively as negatively-charged excitons and neutral excitons, since the excess electrons were considered to be extracted from the dot region and formation of negatively-charged excitons was suppressed under high bias.
引用
收藏
页码：107 / 109
页数：3
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