Theoretical investigation of sheath expansion and implant fluence uniformity in enhanced glow discharge plasma immersion ion implantation

被引:11
|
作者
Kwok, Dixon T. K. [1 ]
Lu, Qiu Yuan [1 ,2 ]
Li, Liu He [1 ,2 ]
Fu, Ricky K. Y. [1 ]
Chu, Paul K. [1 ]
机构
[1] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
[2] Beijing Univ Aeronaut & Astronaut, Dept 702, Sch Mech & Automat Engn, Beijing 100083, Peoples R China
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.2977962
中图分类号
O59 [应用物理学];
学科分类号
摘要
In enhanced glow discharge plasma immersion ion implantation that involves a small-pointed anode and large area tabular cathode, the high negative substrate bias acts as the plasma producer and supplies the implantation voltage. An electric field is created to focus the electrons and the electron-focusing field in turn enhances the glow discharge process. The sheath physics is theoretically investigated using numerical simulation based on the multiple-grid particle-in-cell code. Electron focusing is corroborated and the plasma sheath has enough expansion when t=40 mu s so that a uniform distribution of the incident ion fluence is attained. (c) 2008 American Institute of Physics.
引用
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页数:3
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