Ion focusing in enhanced glow discharge plasma immersion ion implantation of hydrogen and nitrogen into silicon

被引：5

作者：

Lu, Qiu Yuan ^{[1
]}

Wang, Zhuo ^{[1
,2
]}

Li, Liu He ^{[1
,2
]}

Fu, Ricky K. Y. ^{[1
]}

Chu, Paul. K. ^{[1
]}

机构：

[1] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China

[2] Beijing Univ Aeronaut & Astronaut, Sch Mech & Automat Engn, Dept 702, Beijing 100191, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 108卷 / 03期

关键词：

ELECTRON-IMPACT; CROSS-SECTIONS; EVAPORATION; IONIZATION;

D O I：

10.1063/1.3467967

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ion focusing in enhanced glow discharge plasma immersion ion implantation (EGD-PIII) of hydrogen into silicon affects the lateral ion fluence uniformity. The phenomenon and its effects are investigated experimentally and theoretically under different conditions and compared to those in nitrogen EGD-PIII. Consistent results are obtained from experiments and numerical simulation disclosing that the lower the plasma density, the more severe is the ion focusing effect. The influence of the negative high voltage on the ion focusing effect is small compared to that of the plasma density. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3467967]

引用

页数：4

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