Influence of annular magnet on discharge characteristics in enhanced glow discharge plasma immersion ion implantation

被引:7
|
作者
Li, Liu He [1 ,2 ]
Wang, Zhuo [1 ,2 ]
Lu, Qiu Yuan [1 ]
Pang, En Jing [2 ]
Dun, Dan Dan [2 ]
He, Fu Shun [2 ]
Li, Fen [2 ]
Fu, Ricky K. Y. [1 ]
Chu, Paul K. [1 ]
机构
[1] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
[2] Beijing Univ Aeronaut & Astronaut, Dept 702, Sch Mech & Automat Engn, Beijing 100083, Peoples R China
基金
美国国家科学基金会;
关键词
HOLLOW-ANODE DISCHARGE; FIELD;
D O I
10.1063/1.3537962
中图分类号
O59 [应用物理学];
学科分类号
摘要
A permanent annular magnet positioned at the grounded anode alters the discharge characteristics in enhanced glow discharge plasma immersion ion implantation (EGD-PIII). The nonuniform magnetic field increases the electron path length and confines electron motion due to the magnetic mirror effect and electron-neutral collisions thus occur more frequently. The plasma potential and ion density measured by a Langmuir probe corroborate that ionization is improved near the grounded anode. This hybrid magnetic field EGD-PIII method is suitable for implantation of gases with low ionization rates. (C) 2011 American Institute of Physics. [doi:10.1063/1.3537962]
引用
收藏
页数:3
相关论文
共 50 条
  • [1] Experimental investigation of discharge characteristics in enhanced glow discharge plasma immersion ion implantation
    Lu, Qiu Yuan
    Li, Liu He
    Fu, Ricky K. Y.
    Chu, Paul K.
    [J]. PHYSICS LETTERS A, 2008, 372 (40) : 6183 - 6186
  • [2] Investigation of plasma potential and pulsed discharge characteristics in enhanced glow discharge plasma immersion ion implantation and deposition
    Li, Liuhe
    Lu, Qiuyuan
    Fu, Ricky K. Y.
    Chu, Paul K.
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2009, 267 (8-9): : 1696 - 1700
  • [3] Transformation of Enhanced Glow Discharge Dynamics in Nitrogen Plasma Immersion Ion Implantation
    Lu, Qiuyuan
    Li, Liuhe
    Li, Penghui
    Xu, Ruizhen
    Fu, Ricky King-Yu
    Chu, Paul K.
    [J]. IEEE TRANSACTIONS ON PLASMA SCIENCE, 2013, 41 (03) : 553 - 558
  • [4] Ion focusing in enhanced glow discharge plasma immersion ion implantation of hydrogen and nitrogen into silicon
    Lu, Qiu Yuan
    Wang, Zhuo
    Li, Liu He
    Fu, Ricky K. Y.
    Chu, Paul. K.
    [J]. JOURNAL OF APPLIED PHYSICS, 2010, 108 (03)
  • [5] The surface properties modification of polyethylene by enhanced glow discharge plasma immersion ion implantation
    Lu, Qiuyuan
    Wang, Huaiyu
    Li, Liuhe
    Chu, Paul
    [J]. INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2, 2010, : 1100 - +
  • [6] Hybrid evaporation: Glow discharge source for plasma immersion ion implantation
    Li, LH
    Poon, RWY
    Kwok, SCH
    Chu, RK
    Wu, YQ
    Zhang, YH
    [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 2003, 74 (10): : 4301 - 4304
  • [7] Plasma sheath physics and dose uniformity in enhanced glow discharge plasma immersion ion implantation and deposition
    Li, Liuhe
    Li, Jianhui
    Kwok, Dixon T. K.
    Wang, Zhuo
    Chu, Paul K.
    [J]. JOURNAL OF APPLIED PHYSICS, 2009, 106 (01)
  • [8] Impact energy and retained dose uniformity in enhanced glow discharge plasma immersion ion implantation
    Lu, Qiu Yuan
    Li, Liu He
    Li, Jian Hui
    Fu, Ricky K. Y.
    Chu, Paul K.
    [J]. APPLIED PHYSICS LETTERS, 2009, 95 (06)
  • [9] Improved ion implant fluence uniformity in hydrogen enhanced glow discharge plasma immersion ion implantation into silicon
    Luo, J.
    Li, L. H.
    Liu, H. T.
    Yu, K. M.
    Xu, Y.
    Zuo, X. J.
    Zhu, P. Z.
    Ma, Y. F.
    Fu, Ricky K. Y.
    Chu, Paul K.
    [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 2014, 85 (06):
  • [10] Plasma immersion ion implantation using a glow discharge source with controlled plasma potential
    Ueda, M
    Gomes, GF
    Berni, LA
    Rossi, JO
    Barroso, JJ
    Beloto, AF
    Abramof, E
    Reuther, H
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 161 : 1064 - 1068