Static Read Stability and Write Ability Metrics in FinFET based SRAM Considering Read and Write-Assist Circuits

被引：0

作者：

Jeong, Hanwool ^{[1
]}

Yang, Younghwi ^{[1
]}

Lee, Junha ^{[1
]}

Kim, Jisu ^{[1
]}

Jung, Seong-Ook ^{[1
]}

机构：

[1] Yonsei Univ, Sch Elect & Elect Engn, Seoul, South Korea

来源：

2012 19TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS (ICECS) | 2012年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper evaluates the read stability and write ability metrics of the SRAM not only for the basic bitcell but also for the bitcell with read and write assist circuits. Some metrics cannot be used to properly estimate the yield and the reasons are analyzed. Based on the analysis results, we suggest the read and write metrics which can properly estimate the yield regardless of assist circuits.

引用

页码：833 / 836

页数：4

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