Aggregation of nitrogen on oxygen precipitate in annealed Czochralski silicon wafer observed by secondary ion mass spectroscopy measurement

被引：1
|
作者：
Tanahashi, K [1 ]
Yamada-Kaneta, H [1 ]
机构：
[1] Fujitsu Ltd, Atsugi, Kanagawa 2430197, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2006年 / 45卷 / 4-7期
关键词：
nitrogen; Czochralski silicon; oxygen precipitate; SIMS; infrared absorption;
D O I：
10.1143/JJAP.45.L148
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Nitrogen (N) distribution in the annealed Czochralski (CZ) wafer is investigated by secondary ion mass spectroscopy (SIMS) imaging measurement. Intensity mapping of secondary ions shows the aggregation of N on the oxygen precipitate in the annealed wafer. Infrared absorption peak caused by interstitial N pairs (N-N pairs) is observed in the as-grown wafer. Based on the experimental results of SIMS and Fourier transform infrared absorption (FT-IR) measurement, behavior of N during annealing for the annihilation of sub-surface void defects is discussed.
引用
收藏
页码：L148 / L150
页数：3
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