Raman study of interface roughness in (GaAs)(n)(AlAs)(n) superlattices grown on tilted surfaces: Evidence of corrugation of the (113) interface

被引：11
|
作者：
daSilva, SW
Pusep, YA
Galzerani, JC
Pimenta, MA
Lubyshev, DI
Borrero, PPG
Basmaji, P
机构：
[1] UNIV FED MINAS GERAIS,DEPT FIS,BR-30161970 BELO HORIZONT,MG,BRAZIL
[2] UNIV SAO PAULO,INST FIS SAO CARLOS,BR-13560970 SAO CARLOS,SP,BRAZIL
来源：
PHYSICAL REVIEW B | 1996年 / 53卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.53.1927
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The optical phonons in ultrathin-layer GaAs/AlAs superlattices grown in different crystal directions have been studied by Raman scattering. The results give evidence of the formation of different interfaces depending on the growth direction. The strongest influence of the interdiffusion was found for directions lying between the [001] and [110] axes. Raman spectra of the (113) A-oriented (GaAs)(n)/(AlAs)(n) superlattices show the splitting of optical phonons confined in the narrow and in the wide parts of the corrugated layers. The analysis of the observed splitting reveals that the corrugation is two monolayers high.
引用
收藏
页码：1927 / 1932
页数：6
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