Gate Tunable 2D WSe2 Esaki Diode by SiNx Doping

被引：0
|
作者：
Pang, Chin-Sheng
Ilatikhameneh, Hesameddin
Chen, Zhihong [1 ]
机构：
[1] Purdue Univ, ECE Dept, W Lafayette, IN 47907 USA
来源：
2017 75TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC) | 2017年
关键词：
TRANSISTORS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页数：2
相关论文
共 50 条
  • [41] Charge dynamics in the 2D/3D semiconductor heterostructure WSe2/GaAs
    Rojas-Lopez, Rafael R.
    Hendriks, Freddie
    van der Wal, Caspar H.
    Guimaraes, Paulo S. S.
    Guimaraes, Marcos H. D.
    APPLIED PHYSICS LETTERS, 2024, 125 (13)
  • [42] High Voltage Gain WSe2 Complementary Compact Inverter With Buried Gate for Local Doping
    Wan, Da
    Jiang, Bei
    Huang, Hao
    Chen, Chen
    Abliz, Ablat
    Ye, Cong
    Liu, Xingqiang
    Zou, Xuming
    Li, Guoli
    Flandre, Denis
    Liao, Lei
    IEEE ELECTRON DEVICE LETTERS, 2020, 41 (06) : 944 - 947
  • [43] Gate-Tunable Magnetism via Resonant Se-Vacancy Levels in WSe2
    Tuan Dung Nguyen
    Jiang, Jinbao
    Song, Bumsub
    Tran, Minh Dao
    Choi, Wooseon
    Kim, Ji Hee
    Kim, Young-Min
    Dinh Loc Duong
    Lee, Young Hee
    ADVANCED SCIENCE, 2021, 8 (24)
  • [44] High-Performance WSe2 Top-Gate Devices with Strong Spacer Doping
    Ho, Po-Hsun
    Yang, Yu-Ying
    Chou, Sui-An
    Cheng, Ren-Hao
    Pao, Po-Heng
    Cheng, Chao-Ching
    Radu, Iuliana
    Chien, Chao-Hsin
    NANO LETTERS, 2023, 23 (22) : 10236 - 10242
  • [45] Engineering long range ferromagnetism in 2D transition metal dichalcogenide WSe2
    Gil, Carmen
    Pham, Anh
    Li, Sean
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2015, 249
  • [46] 2D WS2/WSe2(Er) Heterojunction for High Performance Photodetectors
    Chen, Yin
    Liang, Xianxiao
    Liu, Shaoxiang
    Huang, Zuqiang
    Wu, Zepeng
    Liu, Xiu
    Xiao, Zeyun
    Peng, Xiaoyu
    Shi, Xuan
    Zhao, Hongquan
    ADVANCED MATERIALS TECHNOLOGIES, 2024, 9 (11)
  • [47] Visualizing Band Profiles of Gate-Tunable Junctions in MoS2/WSe2 Heterostructure Transistors
    Sun, Xinzuo
    Chen, Yan
    Li, Zhiwei
    Han, Yu
    Zhou, Qin
    Wang, Binbin
    Taniguchi, Takashi
    Watanabe, Kenji
    Zhao, Aidi
    Wang, Jianlu
    Liu, Yuan
    Xue, Jiamin
    ACS NANO, 2021, 15 (10) : 16314 - 16321
  • [48] A tunable bilayer Hubbard model in twisted WSe2
    Xu, Yang
    Kang, Kaifei
    Watanabe, Kenji
    Taniguchi, Takashi
    Mak, Kin Fai
    Shan, Jie
    NATURE NANOTECHNOLOGY, 2022, 17 (09) : 934 - +
  • [49] Polarity Tunable Trionic Electroluminescence in Monolayer WSe2
    Wang, Junyong
    Lin, Fanrong
    Verzhbitskiy, Ivan
    Watanabe, Kenji
    Taniguchi, Takashi
    Martin, Jens
    Eda, Gold
    NANO LETTERS, 2019, 19 (10) : 7470 - 7475
  • [50] Light-Tunable 2D Esaki Diode Photodetector with Well-Balanced High Detectivity and Response Speed
    Li, Xuhong
    Chen, Xiaoqing
    Deng, Wenjie
    Li, Songyu
    Chu, Feihong
    You, Congya
    Li, Jingjie
    Liu, Famin
    Zhang, Yongzhe
    ADVANCED MATERIALS INTERFACES, 2022, 9 (32)
12345