Gate Tunable 2D WSe2 Esaki Diode by SiNx Doping

被引：0
|
作者：
Pang, Chin-Sheng
Ilatikhameneh, Hesameddin
Chen, Zhihong [1 ]
机构：
[1] Purdue Univ, ECE Dept, W Lafayette, IN 47907 USA
来源：
2017 75TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC) | 2017年
关键词：
TRANSISTORS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页数：2
相关论文
共 50 条
  • [21] Plasmonically enhancing 2D WSe2 light absorption for photodetection
    Kamal, Serene
    Bennett-Jackson, Andrew
    Srivastava, Rohit
    Bruce, Robert C.
    Ozaktas, Ekin Gunes
    Khoury, Chris
    Budhani, Ramesh
    Shrekenhamer, David
    Thon, Susanna M.
    MRS ADVANCES, 2024, 9 (09) : 628 - 633
  • [22] Epitaxial 2D SnSe2/ 2D WSe2 van der Waals Heterostructures
    Aretouli, Kleopatra Emmanouil
    Tsoutsou, Dimitra
    Tsipas, Polychronis
    Marquez-Velasco, Jose
    Giamini, Sigiava Aminalragia
    Kelaidis, Nicolaos
    Psycharis, Vassilis
    Dimoulas, Athanasios
    ACS APPLIED MATERIALS & INTERFACES, 2016, 8 (35) : 23222 - 23229
  • [23] Photoresponse of homostructure WSe2 rectifying diode
    Peng, Tien-Hsin
    Hong, Chung-Hung
    Tang, Ming-Ru
    Lee, Si-Chen
    AIP ADVANCES, 2019, 9 (07)
  • [24] Local piezoelectric doping of monolayer WSe2
    Balunov, P. A.
    Ankundinov, A. V.
    Breev, I. D.
    Dunaevskiy, M. S.
    Goltaev, A. S.
    Galimov, A. I.
    Jmerik, V. N.
    Likhachev, K. V.
    Rakhlin, M. V.
    Toropov, A. A.
    Vlasov, A. S.
    Mintairov, A. M.
    APPLIED PHYSICS LETTERS, 2023, 122 (22)
  • [25] Photoinduced doping in monolayer WSe2 transistors
    Wu, Zhangting
    Hong, Jintao
    Jiang, Jie
    Zheng, Peng
    Zheng, Liang
    Ni, Zhenhua
    Zhang, Yang
    APPLIED PHYSICS EXPRESS, 2019, 12 (09)
  • [26] Gate-tunable rectification inversion and photovoltaic detection in graphene/WSe2 heterostructures
    Gao, Anyuan
    Liu, Erfu
    Long, Mingsheng
    Zhou, Wei
    Wang, Yiyan
    Xia, Tianlong
    Hu, Weida
    Wang, Baigeng
    Miao, Feng
    APPLIED PHYSICS LETTERS, 2016, 108 (22)
  • [27] Multi-gate memristive synapses realized with the lateral heterostructure of 2D WSe2 and WO3
    He, Hui-Kai
    Yang, Rui
    Huang, He-Ming
    Yang, Fan-Fan
    Wu, Ya-Zhou
    Shaibo, Jamal
    Guo, Xin
    NANOSCALE, 2020, 12 (01) : 380 - 387
  • [28] Basic Logic Operations Achieved in a Single 2D WSe2 Transistor by Surface-Charge-Transfer Doping
    Yin, Siqi
    Sun, Jiacheng
    Sun, Yiming
    Qiao, Leilei
    Zhu, Wenxuan
    Pan, Feng
    Zhang, Xiaozhong
    Song, Cheng
    ACS APPLIED ELECTRONIC MATERIALS, 2021, 3 (11) : 5059 - 5065
  • [29] Gate Voltage Tunable Temperature Coefficient of Resistance of WSe2 for Thermal Sensing Applications
    Saxena, Shubham
    Uddin, Wasi
    Sharma, Sumit
    Das, Samaresh
    Rao, V. Ramgopal
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (05) : 2600 - 2605
  • [30] Fast gate-tunable photodetection in the graphene sandwiched WSe2/GaSe heterojunctions
    Wei, Xia
    Yan, Faguang
    Lv, Quanshan
    Shen, Chao
    Wang, Kaiyou
    NANOSCALE, 2017, 9 (24) : 8388 - 8392
12345