Gate Tunable 2D WSe2 Esaki Diode by SiNx Doping

被引：0
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作者：
Pang, Chin-Sheng
Ilatikhameneh, Hesameddin
Chen, Zhihong [1 ]
机构：
[1] Purdue Univ, ECE Dept, W Lafayette, IN 47907 USA
来源：
2017 75TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC) | 2017年
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TRANSISTORS;
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页数：2
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