Radiation-stable electronics based on heterocontacting intrinsic semiconductor transistors

被引：0
|
作者：
Volovichev, IN
Gurevich, YG
Koshkin, VM
机构：
[1] Inst Politecn Nacl, Ctr Invest & Estudios Avanzados, Dept Fis, Mexico City 07000, DF, Mexico
[2] Polytech Univ, UA-310002 Kharkov, Ukraine
[3] Natl Acad Sci Ukraine, Inst Radiophys & Elect, UA-310085 Kharkov, Ukraine
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1999年 / 174卷 / 01期
关键词：
D O I：
10.1002/(SICI)1521-396X(199907)174:1<221::AID-PSSA221>3.0.CO;2-C
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
On the basis of the theoretical analysis of a current flowing in systems with sizes about the screening length a multilayer thin-film heterostructure is proposed based on an In2Te3-type intrinsic radiation-stable semiconductor, that has amplifier properties. The theoretical limit of the current gain is determined for the structure.
引用
收藏
页码：221 / 229
页数：9
相关论文
共 50 条
  • [31] Oxide-based thin film transistors for flexible electronics
    Yongli He
    Xiangyu Wang
    Ya Gao
    Yahui Hou
    Qing Wan
    Journal of Semiconductors, 2018, (01) : 61 - 76
  • [32] Oxide-based thin film transistors for flexible electronics
    He, Yongli
    Wang, Xiangyu
    Gao, Ya
    Hou, Yahui
    Wan, Qing
    JOURNAL OF SEMICONDUCTORS, 2018, 39 (01)
  • [33] Oxide-based thin film transistors for flexible electronics
    Yongli He
    Xiangyu Wang
    Ya Gao
    Yahui Hou
    Qing Wan
    Journal of Semiconductors, 2018, 39 (01) : 61 - 76
  • [34] Flexible electronics based on InGaZnO transparent thin film transistors
    Pearton, S.J.
    Lim, Wantae
    Douglas, Erica
    Cho, Hyun
    Ren, F.
    Key Engineering Materials, 2012, 521 : 141 - 151
  • [35] Front-end electronics integrated on high resistivity semiconductor radiation detectors
    Fasoli, L
    Fiorini, C
    Longoni, A
    Sampietro, M
    Lechner, P
    Struder, L
    1996 IEEE-CAS REGION 8 WORKSHOP ON ANALOG AND MIXED IC DESIGN - PROCEEDINGS, 1996, : 117 - 122
  • [36] Extremely radiation stable rectifiers and photovoltaic converters based at thin-film heterojunctions of intrinsic semiconductors
    Volovichev, IN
    Gurevich, YG
    Koshkin, VM
    1997 21ST INTERNATIONAL CONFERENCE ON MICROELECTRONICS - PROCEEDINGS, VOLS 1 AND 2, 1997, : 323 - 326
  • [37] Front-end electronics for energy and position measurements with semiconductor radiation detectors
    Re, V
    INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS, 1999, 29 (01): : 20 - 25
  • [38] The ultimate scaling limit of semiconductor-based transistors
    Zhang, WE
    Wang, FC
    Yang, CH
    Yang, MJ
    SUPERLATTICES AND MICROSTRUCTURES, 1997, 22 (03) : 417 - 420
  • [39] Toward air-stable field-effect transistors with a tin iodide-based hybrid perovskite semiconductor
    Matsushima, Toshinori
    Terakawa, Shinobu
    Leyden, Matthew R.
    Fujihara, Takashi
    Qin, Chuanjiang
    Adachi, Chihaya
    JOURNAL OF APPLIED PHYSICS, 2019, 125 (23)
  • [40] Organic semiconductor based field-effect transistors
    Weis, M.
    2014 10TH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES & MICROSYSTEMS (ASDAM), 2014, : 13 - 19
12345