Radiation-stable electronics based on heterocontacting intrinsic semiconductor transistors

被引：0
|
作者：
Volovichev, IN
Gurevich, YG
Koshkin, VM
机构：
[1] Inst Politecn Nacl, Ctr Invest & Estudios Avanzados, Dept Fis, Mexico City 07000, DF, Mexico
[2] Polytech Univ, UA-310002 Kharkov, Ukraine
[3] Natl Acad Sci Ukraine, Inst Radiophys & Elect, UA-310085 Kharkov, Ukraine
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1999年 / 174卷 / 01期
关键词：
D O I：
10.1002/(SICI)1521-396X(199907)174:1<221::AID-PSSA221>3.0.CO;2-C
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
On the basis of the theoretical analysis of a current flowing in systems with sizes about the screening length a multilayer thin-film heterostructure is proposed based on an In2Te3-type intrinsic radiation-stable semiconductor, that has amplifier properties. The theoretical limit of the current gain is determined for the structure.
引用
收藏
页码：221 / 229
页数：9
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