Study of damaged top layers of silicon crystals produced by BF2+ implantation by high resolution X-ray diffraction

被引：0
|
作者：
Lal, K [1 ]
Bhagavannarayana, G [1 ]
Virdi, GS [1 ]
机构：
[1] NATL PHYS LAB,NEW DELHI 110012,INDIA
来源：
SEMICONDUCTOR DEVICES | 1996年 / 2733卷
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：493 / 495
页数：3
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