Study of damaged top layers of silicon crystals produced by BF2+ implantation by high resolution X-ray diffraction

被引：0
|
作者：
Lal, K [1 ]
Bhagavannarayana, G [1 ]
Virdi, GS [1 ]
机构：
[1] NATL PHYS LAB,NEW DELHI 110012,INDIA
来源：
SEMICONDUCTOR DEVICES | 1996年 / 2733卷
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：493 / 495
页数：3
相关论文
共 50 条
  • [21] High-resolution X-ray diffraction study of CZ-grown GaAsP crystals
    Kowalski, G.
    Gronkowski, J.
    Czyzak, A.
    Slupinski, T.
    Borowski, J.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (08): : 2578 - 2584
  • [22] Rinsing and drying studies of porous silicon by high resolution X-ray diffraction
    Chamard, V
    Pichat, C
    Dolino, G
    SOLID STATE COMMUNICATIONS, 2001, 118 (03) : 135 - 139
  • [23] Boron doped cubic silicon probed by high resolution X-ray diffraction
    Ulyanenkova, Tatjana
    Myronov, Maksym
    Ulyanenkov, Alex
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 3, 2015, 12 (03): : 255 - 258
  • [24] X-RAY BRAGG-DIFFRACTION ON CRYSTALS WITH TRANSITION LAYERS
    KHAPACHEV, YP
    CHUKHOVSKII, FN
    FIZIKA TVERDOGO TELA, 1984, 26 (05): : 1319 - 1325
  • [25] High resolution X-ray studies of porous PbTe layers on silicon substrates
    Mamontov A.I.
    Petrakov A.P.
    Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2017, 11 (3) : 538 - 543
  • [26] X-ray diffraction study of silicon single crystals highly doped with boron
    I. L. Shul’pina
    S. S. Rouvimov
    R. N. Kyutt
    Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2010, 4 : 32 - 35
  • [27] X-ray diffraction study of silicon single crystals highly doped with boron
    Shul'pina, I. L.
    Rouvimov, S. S.
    Kyutt, R. N.
    JOURNAL OF SURFACE INVESTIGATION-X-RAY SYNCHROTRON AND NEUTRON TECHNIQUES, 2010, 4 (01) : 32 - 35
  • [28] High resolution x-ray diffraction and x-ray topography study of GaN on Al2O3
    Chaudhuri, J
    Ng, MH
    Koleske, DD
    Wickenden, AE
    Henry, RL
    WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE, 1998, 512 : 315 - 320
  • [29] X-RAY DIFFRACTION STUDY OF ALDOLASE CRYSTALS
    GORYUNOV, AI
    ANDREYEV.NS
    SHPITSBE.VL
    BIOPHYSICS-USSR, 1969, 14 (06): : 1175 - &
  • [30] Study of the influence of oxygen on structural perfection of silicon single crystals by high-resolution X-ray diffraction and infrared absorption measurements
    Lal, K
    Ramanan, RR
    Bhagavannarayana, G
    JOURNAL OF APPLIED CRYSTALLOGRAPHY, 2000, 33 : 2 - 9
12345