Impact of Parasitic Capacitance and Ferroelectric Parameters on Negative Capacitance FinFET Characteristics

被引：72
|
作者：
Khandelwal, Sourabh [1 ]
Duarte, Juan Pablo [1 ]
Khan, Asif Islam [1 ]
Salahuddin, Sayeef [1 ]
Hu, Chenming [1 ]
机构：
[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 01期
关键词：
NC-FETs; sub-60 mV/decade devices;
D O I：
10.1109/LED.2016.2628349
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, we present a compact model and analyze the impact of key parameters on negative capacitance FinFET (NC-FinFET) device operation. The developed model solves FinFET device electrostatics and Landau-Khalatnikov equations self-consistently. An experimental NC-FinFET device is accurately modeled and the experimentally calibrated parameters are used to analyze the NC-FinFETs device performance and its dependence on several key parameters.
引用
收藏
页码：142 / 144
页数：3
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