Optimization of uniaxial stress for high electron mobility on biaxially-strained n-MOSFETs

被引：9

作者：

Sun, Wookyung ^{[1
]}

Shin, Hyungsoon ^{[1
]}

机构：

[1] Ewha Womans Univ, Dept Elect Engn, Seoul 120750, South Korea

来源：

SOLID-STATE ELECTRONICS | 2014年 / 94卷

基金：

新加坡国家研究基金会;

关键词：

Strained Si; Electron mobility; Uniaxial strain; Biaxial strain; Stress; HOLE MOBILITY; SI;

D O I：

10.1016/j.sse.2014.01.005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The uniaxial stress effect for high electron mobility on biaxially-strained n-MOSFET is investigated by using a one-dimensional self-consistent Schrodinger-Poisson solver. The electron mobility model includes Coulomb, intravalley phonon, intervalley phonon, and surface roughness scattering. We have found that the uniaxial stress effect on biaxially-strained n-MOSFET is significantly different from the uniaxial stress effect on unstrained Si n-MOSFET. It is well known that longitudinal and transverse tensile uniaxial stresses are advantageous for strain-induced high electron mobility. However, we found that the uniaxial strain condition for electron mobility enhancement is changed when it is applied to the biaxially- strained n-MOSFET. To optimize the combined effect of uniaxial and biaxial strain, the longitudinal tensile and transverse compressive uniaxial stresses are advantageous and vertical stress is not helpful for biaxially-strained n-MOSFET. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：23 / 27

页数：5

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