Scattering rates of hole in biaxially-strained ge on high symmetric oriented substrates

Strained Ge technique is an effective way to continue Moore's law, with Si-based CMOS development entered the era of post-Moore. This paper focus on the hole scattering mechanism in biaxially strained Ge on high symmetric surface. Based on the six-bands kp model and the Fermi's golden rule, the model of hole scattering rates as a function of Ge fraction for biaxially strained Ge on (001), (101) and (111) oriented Si1-xGex substrates were established. It was found that the total scattering rates of hole in various strained Ge materials decrease obviously under strain. The another important result show that the minimum of the total scattering rate is the one of strained Ge/(001)Si1-xGex. Our results can provide valuable references to the understanding of strained Ge materials physics. © 2016 American Scientific Publishers All rights reserved.