Scattering rates of hole in biaxially-strained ge on high symmetric oriented substrates

被引：0
|
作者：
Jiang D.-F. [1 ]
Song J.-J. [1 ]
Zhang J. [2 ]
Tang Z.-H. [2 ]
Zhang H.-M. [1 ]
Hu H.-Y. [1 ]
机构：
[1] Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an
[2] National Key Laboratory of Analog Integrated Circuitry, No. 24 Research Institute of China Electronics Technology Group Corporation, ChongQing
来源：
Journal of Computational and Theoretical Nanoscience | 2016年 / 13卷 / 01期
关键词：
Hole; Model; Scattering Rate; Strained Ge;
D O I：
10.1166/jctn.2016.4857
中图分类号：
学科分类号：
摘要：
Strained Ge technique is an effective way to continue Moore's law, with Si-based CMOS development entered the era of post-Moore. This paper focus on the hole scattering mechanism in biaxially strained Ge on high symmetric surface. Based on the six-bands kp model and the Fermi's golden rule, the model of hole scattering rates as a function of Ge fraction for biaxially strained Ge on (001), (101) and (111) oriented Si1-xGex substrates were established. It was found that the total scattering rates of hole in various strained Ge materials decrease obviously under strain. The another important result show that the minimum of the total scattering rate is the one of strained Ge/(001)Si1-xGex. Our results can provide valuable references to the understanding of strained Ge materials physics. © 2016 American Scientific Publishers All rights reserved.
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页码：666 / 670
页数：4
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