High-resolution scanning spreading resistance microscopy of surrounding-gate transistors

被引：2
|
作者：
Alvarez, D [1 ]
Schömann, S
Goebel, B
Manger, D
Schlösser, T
Slesazeck, S
Hartwich, J
Kretz, J
Eyben, P
Fouchier, M
Vandervorst, W
机构：
[1] Infineon Technol AG, Corp Res Nano Devices, D-81730 Munich, Germany
[2] Infineon Technol AG, Failure Anal, D-81541 Munich, Germany
[3] Dresden GmbH & Co OHG, Infineon Technol, IFDD, MDC TI 2, D-01099 Dresden, Germany
[4] IMEC, B-3001 Louvain, Belgium
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2004年 / 22卷 / 01期
关键词：
D O I：
10.1116/1.1632921
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Scanning spreading resistance microscopy (SSRM) was performed in surrounding-gate transistors for 70 nm dynamic random access memories. Sub-10 nm features were resolved using full diamond tips and different processing schemes were correlated with the electrical characteristics of the devices and the SSRM measurements. SSRM was found to be a powerful tool for the characterization and failure analysis determination of this device concept in the very small scale. (C) 2004 American Vacuum Society.
引用
收藏
页码：377 / 380
页数：4
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