High-resolution characterization of ultrashallow junctions by measuring in vacuum with scanning spreading resistance microscopy

被引：63
|
作者：
Zhang, L.
Ohuchi, K.
Adachi, K.
Ishimaru, K.
Takayanagi, M.
Nishiyama, A.
机构：
[1] Toshiba Co Ltd, Ctr Corp Res & Dev, Adv LSI Technol Lab, Saiwai Ku, Kawasaki, Kanagawa 2128582, Japan
[2] Toshiba Co Ltd, Semicond Co, Ctr Semicond Res & Dev, Isogo Ku, Kanagawa 2358522, Japan
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 19期
关键词：
D O I：
10.1063/1.2736206
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The spatial resolution of scanning spreading resistance microscopy has been limited by using conventional probes when measuring in air. Sufficient electric contact of a probe-sample has been difficult to obtain in air due to the existence of moisture/contamination. Two-dimensional carrier profiling of nanoscale silicon devices is performed in a vacuum with conventional probes, and a high spatial resolution is obtained. Ultrashallow junctions down to 10 nm are measured accurately with high reproducibility. Experimental results show that a good electric contact between probe and sample is important for obtaining high spatial resolution. (C) 2007 American Institute of Physics.
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页数：3
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