Nanoporous alumina wire templates for surrounding-gate nanowire transistors

被引:14
|
作者
Wade, Travis L. [1 ]
Hoffer, Xavier
Mohammed, Al Dughaim
Dayen, Jean-Francois
Pribat, Didier
Wegrowe, Jean-Eric
机构
[1] Ecole Polytech, Solides Irradies Lab, F-91128 Palaiseau, France
[2] Ecole Polytech, Lab Phys Interfaces & Couches Minces, F-91128 Palaiseau, France
关键词
D O I
10.1088/0957-4484/18/12/125201
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Aluminium wires are electrochemically sculptured into bi-directional templates for the templated growth and contacting of nanowires as three terminal devices. The use of this nanostructured template is demonstrated by a ZnO nanowire surrounding-gate field-effect transistor. This bottom-up approach to a 3D nanowire transistor is unique in that it can be almost entirely fabricated in a beaker using aqueous, room temperature electrochemistry. The fabrication procedures and preliminary device characteristics of this new approach to nanowire transistors are shown.
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页数:4
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