Modelling of the Gate Capacitance in the Double Nanowire based Field-Effect Transistors

被引：0

作者：

Liu, Fengyuan ^{[1
]}

Dahiya, Ravinder ^{[1
]}

机构：

[1] Univ Glasgow, James Watt Sch Engn, Bendable Elect & Sensing Technol BEST Grp, Glasgow G12 8QQ, Lanark, Scotland

来源：

PROCEEDINGS OF THE 2021 IEEE INTERNATIONAL CONFERENCE ON FLEXIBLE AND PRINTABLE SENSORS AND SYSTEMS (FLEPS) | 2021年

基金：

英国工程与自然科学研究理事会;

关键词：

COMSOL; Gate capacitance; NWFET; Cylinder-on-plate model; Flexible electronics; GROWTH;

D O I：

10.1109/FLEPS51544.2021.9469836

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nanowires (NWs) are promising candidates for high-performance flexible and printed electronics. To evaluate the performance of NW based devices, it is important to develop suitable models. To this end, this paper presents a finite element method (FEM) study of the gate capacitance from the double nanowire (NW) based field-effect transistor (FET). The influence of the diameter, NW-to-NW spacing and the relative orientation between the NWs have been evaluated. We found that the total capacitance in a sparsely distributed double NW system is dominated by the NW-to-NW spacing and their diameters; the influence of the relative orientation is almost negligible. By contrast, when the two NWs are close enough, the influence of the relative orientation starts to play a role. In the extreme case where the two NWs are in contact, the rational angle between the two NWs can influence as much as 1/3 of the total capacitance. The results from this fundamental study provide an interesting insight into the influence of NW distribution on the performance of the NW based FETs.

引用

页数：4

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