Sensing with extended gate negative capacitance ferroelectric field-effect transistors

被引：1

作者：

Xue, Honglei ^{[1
]}

Peng, Yue ^{[2
]}

Jing, Qiushi ^{[1
]}

Zhou, Jiuren ^{[2
]}

Han, Genquan ^{[2
]}

Fu, Wangyang ^{[1
]}

机构：

[1] Tsinghua Univ, Sch Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China

[2] Xidian Univ, Sch Microelect, Xian 710071, Peoples R China

来源：

CHIP | 2024年 / 3卷 / 01期

关键词：

Extended gate; Ion-sensitive fi eld-effect transistors; Negative capacitance; Sub-60 mV/dec subthreshold swing; Ferroelec- tric memory effect; DATA RETENTION; OXIDE; MEMORY; FILMS;

D O I：

10.1016/j.chip.2023.100074

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

With major signal analytical elements situated away from the measurement environment, extended gate (EG) ion-sensitive fi eld- effect transistors (ISFETs) offer prospects for whole chip circuit design and system integration of chemical sensors. In this work, a highly sensitive and power-ef fi cient ISFET was proposed based on a metal - ferroelectric - insulator gate stack with negative capacitance - induced super-steep subthreshold swing and ferroelectric memory function. Along with a remotely connected EG electrode, the architecture facilitates diverse sensing functions for future establishment of smart biochemical sensor platforms.

引用

页数：6

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